DMP3098L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-30V
R DS(on) max
70m ? @ V GS = -10V
120m ? @ V GS =-4.5V
I D
T A = +25°C
-3.8A
-3.0A
?
?
?
?
?
?
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
?
?
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
?
?
Power management functions
Analog Switch
Load Switch
Boost Switch
?
?
?
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT-23
G
D
S
Gate
Source
Top View
Ordering Information (Note 4)
Part Number
DMP3098L -7
Pin Configuration
Case
SOT23
EQUIVALENT CIRCUIT
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
DMB
DMB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y ? M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y ? = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Chengdu A/T Site
Shanghai A/T Site
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP3098L
Document number: DS31447 Rev. 8 - 2
1 of 5
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料
DMP3098LDM-7 MOSFET P-CH 30V 4A SOT-26
DMP3098LSD-13 MOSFET P-CH 30V 4.4A 8-SOIC
DMP3098LSS-13 MOSFET P-CH 30V 5.3A 8-SOIC
DMP3105LVT-7 MOSFET P-CH 30V 3.1A TSOT26
DMP3130L-7 MOSFET P-CH 30V 3.5A SOT-23
DMP3160L-7 MOSFET P-CH 30V 2.7A SOT23-3
DMP31D0UFB4-7B MOSF P CH 30V 540MA X2-DFN1006-3
DMP4015SK3-13 MOSFET P-CH 40V 14A TO252 DPAK
相关代理商/技术参数
DMP3098LDM 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3098LDM-7 功能描述:MOSFET PMOS-SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3098LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3098LSD-13 功能描述:MOSFET PMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3098LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP3098LSS-13 功能描述:MOSFET PMOS SINGLE P-CHANNL 30V 5.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3099L-7 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 30V SOT23
DMP3100L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET